Strong Bxciton Absorption Peak Enhancement without Redshift of Absorption Edge in Al_<0.3>Ga_<0.7>As/GaAs Five-Step Asymmetric Coupled Quantum Well with Modified Potential
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-07-01
著者
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NAKANO Yoshiaki
Department of Surgery, NTT West Osaka Hospital
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Sugiyama Masaki
Department Of Electronic Engineering The University Of Tokyo
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FENG Hao
Department of Electronic Engineering, The University of Tokyo
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PANG Jia-Pang
Department of Electronic Engineering, The University of Tokyo
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TADA Kunio
Department of Electronic Engineering, The University of Tokyo
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Tada Kunio
Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo
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Feng Hao
Department Of Electronic Engineering The University Of Tokyo:(present Address)center For Quantum Dev
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Feng Hao
Department Of Electrical And Electronic Engineering University Of Hong Kong
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Sugiyama Munehiro
Ntt Interdisciplinary Research Laboratories
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Pang Jia-pang
Department Of Electronic Engineering The University Of Tokyo
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Nakano Yoshiaki
Department Of Surgery Ntt West Osaka Hospital
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Nakano Yoshiaki
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Tada Kunio
Department Of Electronic Engineering Faculty Of Engineering The University Of Tokyo
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Tada Kunio
Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
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