Ridge Semiconductor Laser with Laterally Undercut Etched Current Confinement Structure(Semiconductor Devices,<Special Section>Recent Advances in Integrated Photonic Devices)
スポンサーリンク
概要
- 論文の詳細を見る
In this paper we modeled and analyzed the ridge type InGaAlAs/InP semiconductor laser with lateral current confinement structure, and optimized the design for the ridge wave guide with the current confinement. We proposed and fabricated the ridge type InGaAlAs/InP laser with a cost effective selective undercut etching method and demonstrated the improvement of the ridge laser performance. This paper provides a solution to solve the cost/yield issue for conventional BH (buried hetero-structure) type laser and performance issue for conventional ridge type laser.
- 社団法人電子情報通信学会の論文
- 2007-05-01
著者
-
NAKANO Yoshiaki
Research Center for Advanced Science and Technology, The University of Tokyo
-
Nakano Yoshiaki
Research Center For Advanced Science And Technology The University Of Tokyo
-
Nakano Yoshiaki
Univ. Tokyo Tokyo Jpn
-
NISHIDE Kazuhiro
Research Center for Advanced Science and Technology, The University of Tokyo
-
CHEN Nong
Archcom
-
DARJA Jesse
RCAST, The Univ. of Tokyo
-
NARATA Shinichi
RCAST, The Univ. of Tokyo
-
IKEDA Kenji
RCAST, The Univ. of Tokyo
-
NISHIDE Kazuhiro
RCAST, The Univ. of Tokyo
-
NAKANO Yoshiaki
RCAST, The Univ. of Tokyo
-
Darja Jesse
Rcast The Univ. Of Tokyo
-
Darja Jesse
Research Center For Advanced Science And Technology The University Of Tokyo
-
Narata Shinichi
Rcast The Univ. Of Tokyo
-
Nishide Kazuhiro
Research Center For Advanced Science And Technology The University Of Tokyo
-
Ikeda Kenji
Research Center For Advanced Science And Technology The University Of Tokyo
関連論文
- Improved Etched Surface Morphology in Electron Cyclotron Resonance-Reactive Ion Etching of GaN by Cyclic Injection of CH_4/H_2/Ar and O_2 with Constant Ar Flow
- Surface Reaction Kinetics in Metalorganic Vapor Phase Epitaxy of GaAs through Analyses of Growth Rate Profile in Wide-Gap Selective-Area Growth
- Comparison of Organic and Hydride Group V Precursors in Terms of Surface Kinetics in Wide-Gap Selective Area Metalorganic Vapor Phase Epitaxy
- Monolithically Integrated InGaN-Based Multicolor Light-Emitting Diodes Fabricated by Wide-Stripe Selective Area Metal-Organic Vapor Phase Epitaxy
- Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth
- Kinetic Analysis of InN Selective Area Metal-Organic Vapor Phase Epitaxy
- Fabrication of AlGaN-Based Waveguides by Inductively Coupled Plasma Etching
- Interferon for treatment of breakthrough infection with hepatitis B virus mutants developing during long-term lamivudine therapy
- Investigation of the Modulation Efficiency of InGaAsP/InP Ridge Waveguide Phase Modulators at 1.55 μm
- GaN-Based High-Speed Intersubband Optical Switches
- Fabrication of a Monolithically Integrated WDM Channel Selector Using Single Step Selective Area MOVPE and Its Characterization(Semiconductor Devices,Recent Advances in Integrated Photonic Devices)
- Highly-Permissible Alignment Tolerance of Back-Illuminated Photo-Diode Array Attached with a Self-Aligned Micro Ball Lens
- Semiconductor Waveguide Optical Isolator Incorporating Ferromagnetic Epitaxial MnSb for High Temperature Operation
- Ridge Semiconductor Laser with Laterally Undercut Etched Current Confinement Structure(Semiconductor Devices,Recent Advances in Integrated Photonic Devices)
- Waveguide-Based 1.5μm Optical Isolator Based on Magneto-Optic Effect in Ferromagnetic MnAs
- Monolithically Integrated Mach-Zehnder Interferometer All-Optical Switches by Selective Area MOVPE(Lasers, Quantum Electronics)
- Four Channel Ridge DFB Laser Array for 1.55μm CWDM Systems by Wide-Stripe Selective Area MOVPE(Semiconductor Devices,Recent Advances in Integrated Photonic Devices)
- Design and Simulation of InP1×N Planar Optical Switch Based on Ream Deflection
- All-Optical Flip-Flop Based on Coupled-Mode DBR Laser Diode for Optically Clocked Operation