Material Consideration on Ta, Mo, Ru, and Os as Glue Layer for Ultra Large Scale Integration Cu Interconnects
スポンサーリンク
概要
- 論文の詳細を見る
The electromigration resistance of ultra-large scale integration (ULSI) Cu interconnects can be improved by inserting an adhesion promoter between Cu and the diffusion barrier. A metallurgical survey was accomplished to select the element having a good Cu adhesion property. For adoption as an interconnect material, it should have a low resistivity and should not react with Cu to avoid increasing the resistance of Cu interconnects. Ru, Os, Mo, W, and Ta satisfied the above conditions. The Cu adhesion property of these elements was estimated by the lattice misfit concept. The Cu adhesion property was experimentally examined and compared hcp elements (Ru and Os), which have a good matching interface with fcc Cu, with the bcc elements (Mo and Ta). Ru and Os, which had lower lattice misfit values, showed a better adhesion property than the bcc elements having higher lattice misfit values. Among these elements, Ru had the best Cu adhesion property and thus it can be an optimum glue layer element for Cu interconnects.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-15
著者
-
SATO Hiroshi
Technology Development Center, Tokyo Electron Ltd.
-
Kojima Yasuhiko
Technology Development Center Tokyo Electron At Limited
-
Koseki Toshihiko
Department Of Materials Engineering School Of Engineering The University Of Tokyo
-
Kim Hoon
Department Of Agricultural Chemistry Sunchon National University
-
Naito Yasushi
Department Of Otolaryngology Head And Neck Surgery Kobe City Medical Center General Hospital
-
Ohba Takayuki
Division of University Corporate Relations, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8654, Japan
-
Shimogaki Yukihiro
Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
-
Kojima Yasuhiko
Technology Development Center, Tokyo Electron AT Limited, 650 Mitsuzawa, Hosaka-cho, Nirasaki, Yamanashi 407-0192, Japan
-
Koseki Toshihiko
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
-
Ohta Tomohiro
Division of University Corporate Relations, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8654, Japan
-
Naito Yasushi
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
-
Sato Hiroshi
Technology Development Center, Tokyo Electron AT Limited, 650 Mitsuzawa, Hosaka-cho, Nirasaki, Yamanashi 407-0192, Japan
-
Sato Hiroshi
Technology Development Center, Tokyo Electron AT Limited
-
Shimogaki Yukihiro
Department of Chemical System Engineering, Faculty of Engineering, University of Tokyo,
-
SHIMOGAKI YUKIHIRO
Department of Chemical Engineering, University of Tokyo
関連論文
- Deposition of Cu-Ag Alloy Film by Supercritical Fluid Deposition
- Monolithically Integrated InGaN-Based Multicolor Light-Emitting Diodes Fabricated by Wide-Stripe Selective Area Metal-Organic Vapor Phase Epitaxy
- Intersubband Transition at 1.52μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy
- Fabrication of Abrupt AlN/GaN Multi Quantum Wells by Low Temperature Metal Organic Vapor Phase Epitaxy
- Conformal Deposition and Gap-Filling of Copper into Ultranarrow Patterns by Supercritical Fluid Deposition
- Cloning and Comparison of Third β-Glucoside Utilization (bglEFIA) Operon with Two Operons of Pectobacterium carotovorum subsp. carotovorum LY34
- Chemical Vapor Deposition of Mn and Mn Oxide and their Step Coverage and Diffusion Barrier Properties on Patterned Interconnect Structures
- Phase Ii study of docetaxel and cisplatin combination chemotherapy in metastatic or unresectable localized non-small-cell lung cancer
- Effects of Boron, Niobium and Titanium on Grain Growth in Ultra High Purity 18% Cr Ferritic Stainless Steel
- Isobutyl silane precursors for SiCH low-k cap layer beyond the 22nm node: analysis of film structure for compatibility of lower k-value and high barrier properties (Special issue: Advanced metallization for ULSI applications)
- Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al Using In Situ Infrared Reflection Absorption Spectroscopy : Teoretical Optimization Procedure (3)
- Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations : Theoretical Process Optimization Procedure(2)
- Kinetics of GaAs Metalorganic Chemical Vapor Deposition Studied by Numerical Analysis Based on Experimental Reaction Data
- Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy : Theoretical Process Optimization Procedure(1)
- Effect of Underlayers on the Morphology and Orientation of Aluminum Films Prepared by Chemical Vapor Deposition Using Dimethylaluminumhydride
- Abnormal αto γ Transformation Behavior of Steels with a Martensite and Bainite Microstructure at a Slow Reheating Rate
- Deposition of wsi_x Films from Preactivated Mixture of WF_6/SiH_4
- Electrical and Thermal Stability Characteristics of HfCN Films as Metal Gate-Electrode Synthesized by Metalorganic Chemical Vapor Deposition
- High Temperature Annealing-Induced Phase Transformation Characteristic of Nitrogen-Rich Hafnium Nitride Films
- Physical and Electrical Characteristics of HfN Metal Gate Electrode Synthesized by Post-Rapid Thermal Annealing-assisted MOCVD
- Fabrication of Hf(C)N Films on SiO_2 by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor
- Addition of Chemicals for Deposition of Copper by Chemical Vapor Deposition Using Cu(hfac)tmvs Precursor : Semiconductors
- Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement
- Investigation of Interface Formed between Top Electrodes and Epitaxial NiO Films for Bipolar Resistance Switching
- Preparation of Amorphous Fluorinated Carbon Film Using Low Global-Warming Potential Gas, C_4F_6, by Plasma Enhanced Chemical Vapor Deposition
- Chemical Bonding States and Band Alignment of Ultrathin AlOxNy/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition
- Novel Precursors for SiCH Low-$k$ Caps beyond the 22 nm Node: Reactions of Silacyclopentane Precursors in the Plasma-Enhanced Chemical Vapor Deposition Process and Structural Analyses of SiCH Films
- Decrease in Deposition Rate and Improvement of Step Coverage by CF_4 Addition to Plasma-Enhanced Chemical Vapor Deposition of Silicon Oxide Films
- Preparation of Low-Dielectric-Constant F-Doped SiO2 Films by Plasma-Enhanced Chemical Vapor Deposition
- Preparation of Low Dielectric Constant F-Doped SiO_2 Films by PECVD
- Composted Oyster Shell as Lime Fertilizer Is More Effective Than Fresh Oyster Shell
- High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal--Organic Vapor Phase Epitaxy
- Reactive Transient Liquid Phase Bonding between AZ31 Magnesium Alloy and Low Carbon Steel
- Metalorganic Vapor Phase Epitaxy of GaAs with AlP Surface Passivation Layer for Improved Metal Oxide Semiconductor Characteristics
- Source Gas Dependency of Amorphous Fluorinated Carbon Film Properties Prepared by Plasma Enhanced Chemical Vapor Deposition Using C4F8, C4F6, and C5F8 Gases
- Preparation of Amorphous Fluorinated Carbon Film Using Low Global-Warming Potential Gas, C4F6, by Plasma Enhanced Chemical Vapor Deposition
- Difference in Occurrence of Heterotopic Ossification According to Prosthesis Type in the Cervical Artificial Disc Replacement
- Influence of Crystal Orientation of Ru Under-Layer on Initial Growth of Copper Chemical Vapor Deposition
- Physical and Chemical Contributions of Interfacial Impurities to Film Adhesion : Surfaces, Interfaces, and Films
- Step Coverage Analysis for Hexamethyldisiloxane and Ozone Atmospheric Pressure Chemical Vapor Deposition
- TiN Films Prepared by Flow Modulation Chemical Vapor Deposition using TiCl4 and NH3
- Adhesion Characteristics between Chemical Vapor Deposited Cu and TiN Films : Aspects of Process Integration
- Solidification of Iron and Steel on Single-crystal Oxide
- Factors Determining the Generation of Polycrystalline Growth over Masks in Selective-Area Metalorganic Vapor Phase Epitaxy : Gas-Phase Concentration Analysis
- A Photo-Detector Having a Silicon Quantum Wire Embedded in Silicon Dioxide
- A Simplification of Proportional Fair Scheduling in Multi-Carrier Transmission Systems
- Improvement of TiN Flow Modulation Chemical Vapor Deposition from TiCl4 and NH3 by Introducing Ar Purge Time
- Heterojunction Bipolar Phototransistor with Monolithic Integrated Microlens
- Current Status of Anti-Aging Medicine, Especially Involving Management of the Menopause, as a Component of Complementary and Alternative Medicine in Korea
- Greedy Algorithm for Target Q Coverage in Wireless Sensor Networks
- Surface Reaction Kinetics in Metalorganic Vapor Phase Epitaxy of GaAs through Analyses of Growth Rate Profile in Wide-Gap Selective-Area Growth
- 18F-fluoromisonidazole positron emission tomography before treatment is a predictor of radiotherapy outcome and survival prognosis in patients with head and neck squamous cell carcinoma
- Stranski–Krastanov Growth of Tungsten during Chemical Vapor Deposition Revealed by Micro-Auger Electron Spectroscopy
- ACTIVATION MECHANISM OF AMORPHOUS NixZr100-x ALLOYS DURING CO/H2 REACTION AND PREPARATION METHOD OF POROUS AMORPHOUS ALLOY CATALYSTS
- Nucleation of W during Chemical Vapor Deposition from WF6 and SiH4
- Kinetics of Subsurface Formation during Metal–Organic Vapor Phase Epitaxy Growth of InP and InGaP
- Ferrite Formation Behaviors from B1 Compounds in Steels
- Atomic Layer Deposited Co(W) Film as a Single-Layered Barrier/Liner for Next-Generation Cu-Interconnects
- Surface Reaction Kinetics of InP and InAs Metalorganic Vapor Phase Epitaxy Analyzed by Selective Area Growth Technique
- Zn and S Doping in GaAs Selective Area Growth by Metal–Organic Vapor Phase Epitaxy
- Effect of Chromium, Aluminum and Nickel on Microstructure and Reverse-S Type Creep Rupture Strength of High Cr Ferritic Heat Resistant Steels
- Surface Modification of SiO2 Microchannels with Biocompatible Polymer Using Supercritical Carbon Dioxide
- In Situ Observation of Initial Nucleation and Growth of Chemical Vapor Deposition of Copper by Surface Reflectivity Measurement
- Precursor Evaluation for Cu-Supercritical Fluid Deposition Based on Adhesion Properties and Surface Morphology
- The Fabrication of Hafnium Nitride by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor for Gate-Electrode Application
- Material Consideration on Ta, Mo, Ru, and Os as Glue Layer for Ultra Large Scale Integration Cu Interconnects
- Kinetic Analysis of Surface Adsorption Layer in GaAs(001) Metalorganic Vapor Phase Epitaxy by In situ Reflectance Anisotropy Spectroscopy
- Comparison of Organic and Hydride Group V Precursors in Terms of Surface Kinetics in Wide-Gap Selective Area Metalorganic Vapor Phase Epitaxy
- Kinetic Analysis of InAsP by Metalorganic Vapor Phase Epitaxy Selective Area Growth Technique
- In situ Observation of Initial Nucleation and Growth Processes in Supercritical Fluid Deposition of Copper
- Low Temperature Metal Organic Vapor Phase Epitaxial Growth of AlN by Pulse Injection Method at 800 °C
- Effect of Partial Pressure of TiCl4 and NH3 on Chemical Vapor Deposition Titanium Nitride (CVD-TiN) Film Cl Content and Electrical Resistivity
- Simple Kinetic Model of ECR Reactive Ion Beam Etching Reactor for the Optimization of GaAs Etching Process
- Effects of Ag Addition on the Resistivity, Texture and Surface Morphology of Cu Metallization
- Impurity-free Disordering of InGaAs/InGaAlAs Quantum Wells on InP by Dielectric Thin Cap Films and Characterization of Its In-plane Spatial Resolution
- Competitive Kinetics Model to Explain Surface Segregation of Indium during InGaP Growth by Using Metal Organic Vapor Phase Epitaxy
- Chemical Vapor Deposition of TiAlN film by Using Titanium Tetrachloride, Dimethylethylamine Alane and Ammonia Gas for ULSI Cu Diffusion Barrier Application
- Fabrication of Hf(C)N Films on SiO2 by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor
- Electrical and Thermal Stability Characteristics of HfCN Films as Metal Gate-Electrode Synthesized by Metalorganic Chemical Vapor Deposition
- Bridge resistance deviation-to-period converter with high linearity
- Intersubband Transition at 1.52 μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy
- Factors Determining the Generation of Polycrystalline Growth over Masks in Selective-Area Metalorganic Vapor Phase Epitaxy: Gas-Phase Concentration Analysis
- Kinetics of TiN Chemical Vapor Deposition Process using TiCl4 and NH3 for ULSI Diffusion Barrier Applications: Relationship between Step Coverage and NH3 Partial Pressure
- Alkali Pretreatment of Wheat Straw (Triticum aestivum) at Boiling Temperature for Producing a Bioethanol Precursor
- Prognostic significance of breast cancer subtype and p53 overexpression in patients with locally advanced or high-risk breast cancer treated using upfront modified radical mastectomy with or without post-mastectomy radiation therapy