Addition of Chemicals for Deposition of Copper by Chemical Vapor Deposition Using Cu(hfac)tmvs Precursor : Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-08-15
著者
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Kojima Yasuhiko
Technology Development Center Tokyo Electron At Limited
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Kojima Yasuhiko
Technology Development Center Tokyo Electron Ltd.
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Vezin Vincent
Department Of Electrical And Electronic Engineering Faculty Of Technology Tokyo University Of Agricu
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HOSHINO Tomohisa
Technology Development Center, Tokyo Electron Ltd.
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CHUNG Gishi
Technology Development Center, Tokyo Electron Ltd.
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Chung Gishi
Technology Development Center Tokyo Electron Ltd.
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KOJIMA Yasuhiko
Technology Development Center, Tokyo Electron Ltd.
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VEZIN Vincent
Department of Electrical and Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology
関連論文
- Addition of Chemicals for Deposition of Copper by Chemical Vapor Deposition Using Cu(hfac)tmvs Precursor : Semiconductors
- Influence of Crystal Orientation of Ru Under-Layer on Initial Growth of Copper Chemical Vapor Deposition
- Material Consideration on Ta, Mo, Ru, and Os as Glue Layer for Ultra Large Scale Integration Cu Interconnects