Monolithic Integration of InP-Based HEMT and MSM Photodiode Using InGaAsP ($\lambda=1.3$ μm) Buffer
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概要
- 論文の詳細を見る
A new epitaxial layer structure for the integration of a high-electron-mobility transistor (HEMT) and a metal-semiconductor-metal photodiode (MSM PD) is proposed. With the aid of an InGaAsP ($\lambda=1.3$ μm) buffer, this epitaxial layer structure has an additional function of light absorption without performance degradation of the HEMT. With this light absorption ability, the epitaxial layer structure can support a MSM PD structure and makes the fabrication process of the MSM PD identical to that of a HEMT. The characteristics of a monolithically integrated HEMT and MSM PD are presented and discussed. Measured $f_{\text{t}}$ and $f_{\text{max}}$ are 18.7 GHz and 47 GHz, respectively, for the $1.5\times 100$ μm2 gate HEMT, and a responsivity of 0.7 A/W at a wavelength of $\lambda=1.3$ μm has been acquired for the MSM PD.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
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Kwon Young-se
Department Of E.e. Kaist
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Cha Jung-ho
Department Of Anatomy
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Kim Jaeho
Department Of Advanced Energy Graduate School Of Frontier Sciences The University Of Tokyo
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Shin Seong-ho
Department Of Electrical Engineering And Computer Science Kaist
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Kim Choul-young
Department Of Electrical Engineering And Computer Science Kaist
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Shin Seong-Ho
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Kusong-Dong Yusong-Gu, Daejon 305-701, Republic of Korea
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