Integration of a HEMT and a MSM PD Using an InGaAsP(λ=1.3μm) Buffer
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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Kwon Young-se
Department Of Electrical Engineering And Computer Science Kaist
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Kwon Young-se
Korea Advanced Institute Of Science And Technology Dept Of Electrical Engineering And Computer Scien
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Kwon Young-se
Dept. Of Electrical Engineering Korea Advanced Institute Of Science And Technology
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Shin Seong-ho
Korea Advanced Institute Of Science And Technology Dept Of Electrical Engineering And Computer Scien
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CHA Jung-Ho
Dept. of EECS, Korea Advanced Institute of Science and Technology (KAIST)
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KIM Jaeho
Dept. of EECS, Korea Advanced Institute of Science and Technology (KAIST)
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KIM Choul-Young
Dept. of EECS, Korea Advanced Institute of Science and Technology (KAIST)
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SHIN Seong-Ho
Dept. of EECS, Korea Advanced Institute of Science and Technology (KAIST)
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Cha Jung-ho
Department Of Electrical Engineering And Computer Science Kaist
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Kim Jaeho
Korea Advanced Institute Of Science And Technology Dept Of Electrical Engineering And Computer Scien
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Kim Jaeho
Department Of Electrical Engineering And Computer Science Kaist
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Kwon Young-se
Korea Advanced Institute Of Science And Technology Dept Of Electrical Engineering And Computer Scien
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Kim Choul-young
Department Of Electrical Engineering And Computer Science Kaist
関連論文
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- Integration of a HEMT and a MSM PD Using an InGaAsP(λ=1.3μm) Buffer
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- Fabrication Method of Microlens Array Using Oxidized Porous Silicon Bulk Micromachining and PDMS Replication Molding
- Monolithic Integration of InP-Based HEMT and MSM Photodiode Using InGaAsP ($\lambda=1.3$ μm) Buffer
- Open-Circuit Voltage Improvement in InGaAs/InP Heterojunction Solar Cells