A New GaAs Field Effect Transistor (FET) with DIpole Barrier (DIB)
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-01-30
著者
-
Kwon Young-se
Korea Advanced Institute Of Science And Technology Dept Of Electrical Engineering And Computer Scien
-
Hong S‐c
Korea Advanced Inst. Sci. And Technol. Taejon Kor
-
Kwon Young-se
Korea Advanced Institute Of Science And Technology Department Of Electrical Engineering
-
CHO Hyun-Ryong
Korea Advanced Institute of Science and Technology, Department of Electrical Engineering
-
JEON Kye-Ik
Korea Advanced Institute of Science and Technology, Department of Electrical Engineering
-
HONG Song-Cheol
Korea Advanced Institute of Science and Technology, Department of Electrical Engineering
-
Jeon Kye-ik
Korea Advanced Institute Of Science And Technology Department Of Electrical Engineering
-
Cho Hyun-ryong
Korea Advanced Institute Of Science And Technology Department Of Electrical Engineering
関連論文
- Heterojunction Bipolar Phototransistor with Monolithic Integrated Microlens
- Integration of a HEMT and a MSM PD Using an InGaAsP(λ=1.3μm) Buffer
- InP/InGaAs/InP Double Hetero-junction Solar Cells with Increased Open-Circuit Voltage
- High Aspect-Ratio Through-Wafer Interconnections with Thick Oxidized Porous Silicon Sidewall Via
- A New GaAs Field Effect Transistor (FET) with DIpole Barrier (DIB)