Photodetector with Embedded Semiconductor-Metal-Semicaonductor Structure : III-V Compound Semiconductors Devices and Materials(<Special Section>Solid State Devices and Materials 1)

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1988-11-20

著者

• Kwon Young-se

  Dept. Of Electrical Engineering Korea Advanced Institute Of Science And Technology

• CHUNG Ki-Woong

  Dept. of Electrical Engineering, Korea Advanced Institute of Science and Technology

• Chung K‐w

  Lg Corporate Inst. Technol. Seoul Kor

関連論文

• Integration of a HEMT and a MSM PD Using an InGaAsP(λ=1.3μm) Buffer
• Photodetector with Embedded Semiconductor-Metal-Semicaonductor Structure : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)

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