A Low Noise Planar-Type Avalanche Photodiode using a Single-Diffusion Process in Geiger-Mode Operation

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概要

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• We report the performances of a planar-type Geiger-mode InGaAs/InP avalanche photodiode (APD) using a single-diffusion process based on a single wet recess-etching technique at a wavelength of 1.55 μm. The recess-etched window region is found to have a smoothly etched sidewall with a large slope width of 0.9 μm. The Geiger-mode characteristics have been measured at 240--280 K for a 20 μm diameter device. The fabricated Geiger-mode APD shows a low dark count probability (DCP) per gate pulse of 2.8\times 10^{-3}, a high photon detection efficiency (PDE) of 17.4%, and a low noise equivalent power (NEP) of 1.74\times 10^{-16} W/Hz^1/2at 240 K. The results are the first demonstration of a planar-type single-diffused Geiger-mode APD using a single wet recess-etching.

• 2013-07-25

著者

• Yang Kyounghoon

  Department Of Electrical Engineering And Computer Science Korea Advanced Institute Of Science And Te

• Hong Jung-ho

  I3system, Inc., Daejeon 305-701, Republic of Korea

• Lee Kiwon

  Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Republic of Korea

• Lee Byoungwook

  I3system, Inc., Daejeon 305-701, Republic of Korea

• Yoon Sunwoong

  I3system, Inc., Daejeon 305-701, Republic of Korea

関連論文

• Performance of New Self-Aligned InP/InGaAs Heterojunction Bipolar Transistors Using Crystallographically Defined Emitter Contact Technology
• Theoretical and Experimental Study on Thermal Characteristics of InP/InGaAs Single Heterojunction Bipolar Transistors
• A Low Noise Planar-Type Avalanche Photodiode using a Single-Diffusion Process in Geiger-Mode Operation
• A Low Noise Planar-Type Avalanche Photodiode using a Single-Diffusion Process in Geiger-Mode Operation (Photonics, quantum electronics, optics, and spectroscopy)

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