AlGaAs/GaAs Heterojunction Bipolar Transistors with Reduced Base-Collector Capacitance Fabricated Using Selective Metalorganic Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-02-28
著者
-
Son Jeong-hwan
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
-
Hong Song-cheol
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
-
Kim Chang-tae
Goldstar Central Research Laboratory
-
Kaon Young-Se
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology
-
Kaon Young-se
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
関連論文
- New Fabrication Technology for Integrating Field Effect Transistors and Diodes
- New Fabrication Technology Integrating FETs and Diodes
- Numerical Simulation on the Device Structure of GaAs Floated Electron Channel Field-Effect Transistor
- AlGaAs/GaAs Heterojunction Bipolar Transistors with Reduced Base-Collector Capacitance Fabricated Using Selective Metalorganic Chemical Vapor Deposition
- New Fabrication Technology for Integrating Field Effect Transistors and Diodes