Hwang Chul | Jusung Engineering
スポンサーリンク
概要
関連著者
-
Hwang Chul
Jusung Engineering
-
Hwang Cheol
School Of Materials Science And Engineering Seoul National University
-
Han Young
Jusung Engineering
-
Hwang Cheol
School Of Mat. Sci. And Eng. Seoul National Univ
-
PARK Jaehoo
School of Materials Science & Engineering, Seoul National University
-
Park Jaehoo
School Of Material Science And Engineering Seoul National University
-
Yang Cheol
Jusung Engineering
-
Yang Doo
Jusung Engineering
-
Hwang Cheol
School Of Material Science And Engineering Seoul National University
-
JUN Jin
Department of Ceramic Engineering, Yonsei University
-
Oh Ki
Jusung Engineering Co. Ltd.
-
CHOI Doo
Department of Ceramic Engineering, Yonsei University
-
Kim Jong
Sejong University
-
Choi Doo
Department Of Advanced Material Science And Engineering Yonsei University
-
PARK Young
Samsung Advanced Institute of Technology
-
Jung Ji
Samsung Advanced Institute Of Technology (sait)
-
Kim Do
Samsung Advanced Institute Of Technology (sait)
-
Park Kyung
Samsung Advanced Institute Of Technology (sait)
-
Kwon Jang
Samsung Advanced Institute Of Technology (sait)
-
KIM Keung
Division of Ceramics, Korea Institute of Science and Technology
-
Kim Keung
Division Of Ceramics Korea Institute Of Science And Technology
-
Noguchi Takashi
Samsung Advanced Institute Of Technology (sait)
-
Oh Ki
Jusung Engineering Co., Ltd., Kyunggi-Do 464-890, Korea
-
Hwang Chul
Jusung Engineering Co., Ltd., Kyunggi-Do 464-890, Korea
-
Kim Keung
Division of Ceramics, Korea Institute of Science and Technology, Seoul P. O. Box 131, Korea
-
Jun Jin
Department of Ceramic Engineering, Yonsei University, Seoul 120-749, Korea
-
Noguchi Takashi
Samsung Advanced Institute of Technology
著作論文
- Effect of Structural Properties on Electrical Properties of Lanthanum Oxide Thin Film as a Gate Dielectric
- Optimization of Postannealing Process for Low Temperature MOCVD (Ba, Sr) TiO_3 Thin Films
- Optimization of Postannealing Process for Low Temperature MOCVD (Ba, Sr) TiO_3 Thin Films
- Optimization of Postannealing Process for Low Temperature MOCVD (Ba, Sr)TiO_3 Thin Films
- Effect of Structural Properties on Electrical Properties of Lanthanum Oxide Thin Film as a Gate Dielectric