Two-Bit/Cell Programming Characteristics of High-Density NOR-Type Flash Memory Device with Recessed Channel Structure and Spacer-Type Nitride Layer
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概要
- 論文の詳細を見る
The structure of novel 2-bit/cell silicon–oxide–nitride–oxide–silicon (SONOS) flash memory device was proposed and characterized for sub-50 nm non-volatile memory (NVM) technology. A proposed memory cell has spacer-type storage nodes on both sidewalls in a recessed channel region. It was shown that counter channel doping near the bottom of the recessed channel is very important and can improve the $V_{\text{th}}$ margin for 2-bit/cell operation by ${\sim}2.5$ times. By controlling doping profiles of the channel doping and the counter channel doping in the recessed channel region, we could obtain the $V_{\text{th}}$ margin more than ${\sim}1.5$ V.
- Japan Society of Applied Physicsの論文
- 2006-10-25
著者
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Han Kyoung-rok
School Of Electrical Engineering And Computer Science Kyungpook National Univ.
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Lee Jong-ho
School Of Eecs Engineering Kyungpook National University
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