Relationship between C=C Bonds and Mechanical Properties of Carbon Rich Low-k Films deposited by Plasma Enhanced Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-03-15
著者
-
Jung Donggeun
Department Of Physics Brain Korea 21 Physics Research Division Institute Of Basic Science And Center
-
Jung Donggeun
Department Of Physics And Institute Of Basic Science Sungkyunkwan University
-
SHIM Cheonman
Department of Physics, Brain Korea 21 Physics Research Division, Institute of Basic Science, and Cen
-
Shim Cheonman
Department Of Physics Brain Korea 21 Physics Research Division Institute Of Basic Science And Center
-
Shim Cheonman
Department Of Physics Brain Korea 21 Physics Research Division And Institute Of Basic Science Sungky
関連論文
- Photoluminescence and Electroluminescence from Polymer-Like Organic Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Para-Xylene as Precursor
- Formation of Reliable HfO_2/HfSi_xO_y Gate-Dielectric for Metal-Oxide-Semiconductor Devices
- Properties of HfO_2/Hf-Silicate/Si Structures with Hf-Silicate Formed by Hf Metal Deposition and Subsequent Reaction : Electrical Properties of Condensed Matter
- Structural and electrical properties of HfO_2/Hf-silicate/Si structures by rf magnetron sputtering
- Structural and electrical properties of HfO_2/Hf-silicate/Si structures by rf magnetron sputtering
- Thickness Dependent Dielectric Property of BaTi0_3/SrTiO_3 Artificial Lattice
- Relationship between C=C Bonds and Mechanical Properties of Carbon Rich Low-k Films deposited by Plasma Enhanced Chemical Vapor Deposition
- The Hysteresis Caused by Interface Trap and Anomalous Positive Charge in Al/CeO_2-SiO_2/Silicon Capacitors
- Diffusion Barrier Characteristics of Hf(C, N) Thin Films Deposited by Plasma Enhanced Metal Organic Chemical Vapor Deposition for Cu Metallization
- Characteristics under Bias-Temperature-Stress of Cu/Low-k a-SiCO: H Structures Prepared by Plasma Enhanced Chemical Vapor Deposition Using a Hexamethyldisilane Precursor and Cu Sputtering
- Effects of Post-Deposition Heat Treatment on the Properties of Low Dielectric Constant Plasma Polymerized Decahydronaphthalene Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition
- Lifetime property of flexible organic light emitting diodes with plasma polymer barrier layers
- Effects of N_2 Plasma Treatment of the Al Bottom Cathode on the Characteristics of Top-Emission-Inverted Organic-Light-Emitting Diodes
- Effects of NH_3 Plasma Treatment of the Substrate on Metal Organic Chemical Vapor Deposition of Copper Films
- Enhancement of Selective Chemical Vapor Deposition of Copper by Nitrogen Plasma Pretreatment
- Effect of Annealing Temperature on Dielectric Constant and Bonding Structure of Low-k SiCOH Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition
- Characteristics of polymer light emitting diodes with the LiF anode interfacial layer
- Properties of Low-k (k-2.05) Plasma Polymer Films Deposited by PECVD Using Decamethyl-cyclopentasiloxane and Cyclohexane as the Precursors
- Properties of Low-k (k-2.05) Plasma Polymer Films Deposited by PECVD Using Decamethyl-cyclopentasiloxane and Cyclohexane as the Precursors
- Effects of Deposition Pressure on the Properties of a Low-Dielectric Constant Cyclohexane-based Plasma Polymer
- Optical Properties of Polymer-like Organic Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Toluene as the Precursor
- Polymer-like Organic Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition Using the Para-xylene Precursor as Low Dielectric Constant Interlayer Dielectrics for Multilevel Metallization
- Characteristics of Copper Diffusion into Low Dielectric Constant Plasma Polymerized Cyclohexane Thin Films
- Effects of Substrate Heating on the Amorphous Structure of InGaZnO Films and the Electrical Properties of Their Thin Film Transistors
- Passivation of Organic Light-Emitting Diodes by the Plasma Polymerized para-Xylene Thin Film : Atoms, Molecules, and Chemical Physics
- Thickness Dependent Dielectric Property of BaTiO3/SrTiO3 Artificial Lattice
- Organic Solar Cells with Hydrogenated In-Doped ZnO Replacing Sn-Doped In2O3 as Transparent Electrode
- Characteristics of Polymer Light Emitting Diodes with the LiF Anode Interfacial Layer
- Characteristics of Organic Light Emitting Diodes with Tetrakis(Ethylmethylamino) Hafnium Treated Indium Tin Oxide
- Effects of Deposition Plasma Power on Properties of Low Dielectric-Constant Plasma Polymer Films Deposited Using Hexamethyldisiloxane and 3,3-Dimethyl-1-butene Precursors
- Enhanced Optical and Electrical Properties of Inorganic Electroluminescent Devices Using the Top-Emission Structure