High Mobility P-Channel Thin-Film Transistors with Ultralarge-Grain Polycrystalline Silicon Formed Using Nickel-Induced Crystallization
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概要
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In this study, p-channel polycrystalline silicon (poly-Si) thin-film transistors (TFTs) using an active layer of ultralarge-grain (ULG) silicon and multistack gate insulators of SiNx/SiO2 were fabricated and investigated. The ULG silicon thin films were formed by nickel (Ni)-induced crystallization and the average grain area of ULG silicon is 118 μm2. The field-effect mobility of p-channel ULG poly-Si TFTs was 111 cm2/(V\cdots), which can be sufficiently applied to high driving parts of display systems. The p-channel ULG poly-Si TFT has a low threshold voltage of -1.06 V, a high ON/OFF current ratio of 9.2\times 10^{7}, and a subthreshold swing of 0.27 V/decade. Moreover, the fabricated TFTs have stable characteristics under temperature and gate bias stress owing to the large grains and smooth surface. These results show that the ULG poly-Si TFTs are remarkably suitable for the application to a low power and high speed pixel-driving device in flat panel displays.
- 2012-09-25
著者
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Yi Junsin
School Of Electrical And Computer Engineering Sungkyunkwan University
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Lee Wonbaek
School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea
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Jang Kyungsoo
School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea
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Yi Junsin
School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea
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Choi Woojin
School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea
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Lee Wonbaek
School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea
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