Ba(Zr_<0.2> Ti<0.8>)O_3 Thin Films Deposited by RF-Magnetron Sputtering for High Dielectric Constant Material Applications

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This paper investigated the structural and eletrical properties of the Ba(Zr_XTi_<1-X>)O_3(BZT)thin films with a mole fraction of x=0.2 for the applications of high dielectric constant material. BZT films with a thickness of 150nm were prepared on Pt/TiO_2/SiO_2/Si substrate as a function of substrate temperature. As the substrate temperature increases, we observed multi-crystalline BZT films with(111)and(200)planes, also crystallinity of the films and dielectric constants improved. BZT film deposited at 400 ℃ demonstrated the following parameters;the dielectric constant and dissipation factor are 95 and 0.021 respectively at 1 MHz, the leakage current is 8.79×10^<-7> A/cm^2. This paper reports the various material properties of BZT films prepared by RF magnetron sputtering system with different conditions and probes feasibility of BZT films in high permittivity material applications.
社団法人電子情報通信学会の論文
2001-06-29