Vertical Organic Field Effect Transistors with an Additional Gate Insulation Structure between Active Layer and Gate Electrode(Session 3A : Emerging Device Technology 2)

概要

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We have made vertical organic field effect transistors which have an additional gate insulation structure on the sidewall of the gate electrodes, to reduce the gate leakage current. The gate insulation structure has been produced by oxidizing the surface of the gate electrode metals. The oxygen plasma has been used to oxidize the gate electrode surface. Associated with other insulation layers on and under the gate electrodes, the gate electrodes can be perfectly separated from the active layers including organic semiconducting materials. The devices with this structure showed basic transistor characteristics with reduced gate leakage current level.
社団法人電子情報通信学会の論文
2010-06-23