Frequency Performance Optimization of Flexible Pentacene Rectifier by Varying the Thickness of Active Layer
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概要
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We studied the thickness dependence on the high-frequency performance of pentacene-based diodes on plastic substrates. The current–voltage characteristics, forward- and reverse-bias breakdown voltages, and the frequency performance of the pentacene rectifiers were measured for diodes with the pentacene layer of various thicknesses (14, 28, 56, 84, and 104 nm) and the MoO3 buffer layer. Although the rectifier with the 56-nm-thick pentacene diode shows a highest output voltage at the low frequency, its output voltage rapidly decreases compared with others. At high frequency region up to 25 MHz, the 84-nm-thick pentacene diode shows best performance. The behavior is analyzed with the current scaling with the pentacene thickness and the frequency response of the impedance of the diode capacitance.
- 2010-05-25
著者
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Hong Yongtaek
Department Of Electrical Engineering And Computer Science Seoul National University
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Yongtaek Hong
Department of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, 599 Gwanangno, Gwanak-gu, Seoul 151-742, Republic of Korea
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Changhee Lee
Department of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, 599 Gwanangno, Gwanak-gu, Seoul 151-742, Republic of Korea
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Lee Changhee
Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Republic of Korea
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Kang Chan-mo
Department of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, 599 Gwanangno, Gwanak-gu, Seoul 151-742, Republic of Korea
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