Theoretical Study of the Hydrogen Effect on the Program/Erase Cycle of MONOS-Type Memories(Session 8A : Memory 2)
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概要
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Due to the aggressive scaling of non-volatile memories, "charge-trap memories" such as MONOS type memories are inevitable. One of the merits of charge trap memories is that they can trap charge inside atomic-scale defect sites in SiN layers. At the same time, however, charge traps with atomistic scale tend to induce additional large structural changes. Hydrogen has attracted a great attention as important heteroatom in MONOS type memories. We theoretically investigate the basic characteristics of hydrogen-defects in SiN layer in MONOS type memories based on first principle calculations. We found that SiN structures with a hydrogen impurity tend to reveal reversible structural change during program/erase operation.
- 2010-06-23
著者
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Shiraishi Kenji
Graduate School of Pure and Applied Science, University of Tsukuba
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Otake Akira
Graduate School of Pure and Applied Sciences, University of Tsukuba
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Yamaguchi Keita
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Otake Akira
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Shiraishi Kenji
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Shiraishi Kenji
Graduate School Of Applied Physics Univ Of Tsukuba
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