F Atom Adsorption on the Fluorinated Si(001) Surface
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概要
- 論文の詳細を見る
First-principles pseudopotential total-energy calculations have been performed to investigate the adsorption of a F atom on the F-terminated Si(001)-$2\times1$ surface. We have determined several stable sites for the adsorbed F atom where energy differences and energy barriers between these adsorption sites are relatively small. It is shown that the incoming F atom can be adsorbed on the fully fluorinated Si(001) surface and break the substrate Si–Si bonds, which is contrary to the results of previous empirical potential simulation.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2001-04-15
著者
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Ohno Takahisa
Science University Of Tokyo
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EZAKI Takahide
Science University of Tokyo
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Ohno Takahisa
Science University of Tokyo, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan
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