Impact of cation surface termination on the electrical characteristics of HfO2/InGaAs(001) metal-oxide-semiconductor capacitors (Special issue: Dielectric thin films for future electron devices: science and technology)

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Ohtake Akihiro

  Joint Research Center For Atom Technology (jrcat):angstrom Technology Partnership (atp)

• Ohtake Akihiro

  National Institute For Materials Science (nims)

• URABE Yuji

  National Institute of Advanced Industrial Science and Technology (AIST)

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• Effect of Interface Oxidation on the Electrical Characteristics of HfO_2/Ultrathin-Epitaxial-Ge/GaAs(100) Structures
• Impact of cation surface termination on the electrical characteristics of HfO2/InGaAs(001) metal-oxide-semiconductor capacitors (Special issue: Dielectric thin films for future electron devices: science and technology)
• Electron Mobility Enhancement of Extremely Thin Body In_Ga_As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers
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• III-V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding

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