Stress engineering of the alkoxide derived ferroelectric thin film on Si wafer
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概要
- 論文の詳細を見る
This paper specifically examines control of the residual stress in thin films by design of the stacking structure. For this study, we prepared highly a-, c- oriented PZT(30/70) (: PZT30) thin films using chemical solution deposition (CSD). A PZT30 thin film was deposited on LaNiO3 (LNO)/Pt/Ti/SiO2/Si and LNO/SiO2/Si with different LNO layer thickness to control the thermal stress. An LNO layer was also prepared using CSD on a Pt/Ti/SiO2/Si substrate and SiO2/Si substrate. The residual stresses in the PZT30 thin films were estimated using Raman analysis. Furthermore, the dielectric property of samples was measured using an impedance analyzer. Effects of the residual stress on the dielectric behavior were demonstrated through experimentation.
- 公益社団法人 日本セラミックス協会の論文
著者
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SUZUKI Hisao
Graduate School of Science and Technology, Shizuoka University
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Matsuda Takeshi
Department of Cardiology, Kanazawa Medical University
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Ohno Tomoya
Department Of Material Science Graduate School Of Engineering Shizuoka University
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Ohno Tomoya
Department Of Dermatology Shimane Medical University
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Malic Babara
Electronic Ceramics Department, Jožef Stefan Institute
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Fukazawa Hiroaki
Graduate School of Science and Technology, Shizuoka University
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WAKIYA Naoki
Graduate School of Science and Technology, Shizuoka University
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KOSEC Marija
Graduate School of Science and Technology, Shizuoka University
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Suzuki Hisao
Graduate School Of Science And Technology Shizuoka University
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Wakiya Naoki
Graduate School Of Sci. And Technol. Shizuoka Univ.
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Suzuki Hisao
Graduate School Of Sci. And Technol. Shizuoka Univ.
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Matsuda Takeshi
Department Of Cardiology School Of Medicine Kanazawa Medical University
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Ohno Tomoya
Department Of Materials Science And Engineering Kitami Institute Of Technology
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OHNO Tomoya
Department of Materials Science, Kitami Institute of Technology
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Matsuda Takeshi
Department of Materials Science, Kitami Institute of Technology
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Fukazawa Hiroaki
Graduate School of Science and Engineering, Shizuoka University, Hamamatsu 432-8561, Japan
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