MOCVD法により合成したバリスター特性を有するNb,Bi同時添加SrTiO_3薄膜の成長挙動(<特集>セラミックスインテグレーション)

概要

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Nb-doped semiconductive SrTiO_3 film and Bi and Nb co-added SrTiO_3 film were grown on (001) MgO substrates by metal-organic chemical vapor deposition (MOCVD). The (001)-oriented SrTiO_3 phase was grown epitaxially with cube-on-cube structure in relation to the MgO substrate. In the case of the Nb-doped SrTiO_3 film, the film exhibited a semiconductive nature with a low electrical resistivity (0.11 Q cm) that is three orders of magnitude lower than that in bulk SrTiO_3 ceramics by adding a much higher Nb addition (1.6-3.5 mol%). Most of the added Nb is thought to substitute for the Ti^4 valence 4^+, as suggested by the dependency of the cell volume change. In the case of Bi and Nb co-added SrTiO_3 film, the lattice parameter was somewhat increased with the addition of Bi, but the amount of Bi was undetectable. The addition of Bi did not produce a thin film with nonlinear electrical resistivity. Introducing a SrO seed layer with -2 nm thick-ness onto (001) MgO substrate produced weak nonlinear I-V (varistor) properties. It might be thought that the grain boundary between the two kinds of in-plane oriented grains, i.e., 45°rotating and cube-on-cube grains, acts as a barrier against varistor characteristics.
2002-05-01