PLD法によるSiO_2/Si(001)基板上エピタキシャルYSZ薄膜の室温合成(<特集>セラミックスインテグレーション)

概要

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YSZ thin films were deposited by pulsed laser deposition (PLD) on Si (001) with native SiO_2, H-terminated Si (001) and ablated Si on H-terminated Si (001) at various temperatures (800, 600, 400, 200℃ and RT (room temperature)). The crystallinity of YSZ thin film on Si (001) with native oxide was the highest among the three substrates. YSZ thin film on ablated Si on H-terminated Si(001) was amorphous. We suggest that an ultrathin SiO_2 layer (<1.1 nm) is necessary for crystal growth of YSZ thin film. A two-step process was attempted to prepare epitaxial YSZ thin films. First, YSZ thin films were deposited on Si (001) with native SiO_2 at 800℃ in 8.0 × 10^<-5> Pa O_2 (reduction condition). Second, YSZ thin films were deposited on Si (001) with native SiO_2 at various temperatures (800, 600, 400, 200℃ and RT) in 7.3 × 10^<-2> Pa O_2. All YSZ thin films deposited by a two-step process were epitaxial. The reason for this mechanism is discussed.
社団法人日本セラミックス協会の論文
2002-05-01