ICPフラッシュ蒸着法によるBaTiO_3薄膜の合成

概要

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ICP (inductively coupled plasma) flash evaporation, which was a recently developed process for film growth, was applied to the preparation of BaTiO_3 films. Powders of BaTiO_3 (ave. dia. 〜0.1μm) were evaporated in thermal Ar+O_2 plasma and deposited onto substrates under 20-60 kPa. Uniform and translucent films could be obtained on polished fused silica plates. They were consisted of cubic BaTiO_3 and the lattice parameter ranged between 0.400 and 0.401 nm. The compositions of the films shown by Ba/Ti atomic ratio were 0.98-1.02. The effect of deposition conditions on the deposition manner were investigated. The results suggested that the mechanism of film growth in ICP flash evaporation was characterized by a masstransport limited process under very high supersaturation. Epitaxial growth was also observed for the films deposited on (100)MgO single crystals.
社団法人日本セラミックス協会の論文
1993-05-01