(100)Pt/(100)MgO基板上へのPzT薄膜の合成とその性質

概要

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PZT thin films were epitaxially grown on (100) Pt/ (100)MgO substrates by CVD under partial oxygen pressure (Po_2) from 0.96 to 8.4 Torr. The crystal structure and microstructure of the films were almost the same as those prepared on MgO substrates irrespective of Po,. However, for films deposited below 1.6 Torr of Po_2, the existence of PbPt_<5-7> phase was ascertained by XRD measurement, and the electric leakage between top and bottom electrodes was observed. The X ray pole figure measurement showed that this PbPt_<5-7> Was epitaxially related to the deposited PZT thin film and the (100)Pt/ (100)MgO substrate. The relative dielectric constant, ε_r, of epitaxially grown Pb(Zr_<0.5>Ti_<0.5>)O_3 Finns was about 300, lower than that of non oriented film. This phenomenon can be elucidated by the fact that the calculated ε_r of PZT crystals along the c axis is lower than that perpendicular to the c axis
社団法人日本セラミックス協会の論文
1994-02-01