高速でエピタキシャル成長させたCVD Pb(Zr, Ti)O_3薄膜の特徴

概要

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Pb (Zr_xTi_<1-x>)O_3 films with good surface flatness were deposited by CVD using the gas mixture of Pb (DPM)_2- Zr (O・t-Bu)_4 Ti(O・i-Pr)_4 O_2 The epitaxially grown Pb (Zr_xT_<1-x>)O_3 films were deposited on (100)MgO sub strates with 300 nm/min of the deposition rate. This deposition rate is the highest among the reported value. The existence of the grains with slight different angle along the film thickness was ascertained by TEM observation. It was attributed to the volume change at the Curie temperature and to the large temperature dependence of a and c axes lattice parameters of Pb (Zr_xTi_<1-x>)O_3 film compared with that of MgO substrate below the Curie temperature. The refractive index of this film was in good agreement with that reported for Pb (Zr_xTi_<1-x>)O_3crystal without post heat treatment and its dispersion can be fitted the Senmeier dispersion formula.
社団法人日本セラミックス協会の論文
1994-02-01