Si(001)基板上へ成膜したイットリア安定化ジルコニア(YSZ)薄膜の初期のエピタキシャル成長過程へのSiO_2層厚さの影響

概要

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Epitaxial growth of yttria-stabilized zirconia(YSZ) thin films on Si(001) substrates containing SiO_2 layers of various thickness was in-situ monitored by reflection high-energy electron diffraction(RHEED). The in-plane lattice parameter of YSZ at the initial stage of the deposition (the thickness of YSZ was below 5 nm), was very close to that of the Si substrate when the thickness of SiO_2 was below 0.49 nm. The in-plane lattice parameter of YSZ was significantly decreased approaching that of bulk YSZ when the thickness of YSZ was over 5 nm. The relaxation of the lattice parameter was caused by the generation of misfit dislocations or regrowth of SiO_2 between the Si and YSZ interface. On the contrary, if the thickness of SiO_2 was between 0.68 and 1.1 nm, the epitaxial growth was also confirmed, however, the in-plane lattice parameter did not change with the thickness of YSZ. The reason for the change of this lattice relaxation with the thickness of SiO_2 was discussed.
社団法人日本セラミックス協会の論文
2001-09-01