パルスレーザー蒸着法によるSi(001)上へのYSZ薄膜のヘテロエピタキシャル成長に及ぼす酸素分圧とレーザーエネルギー密度の影響

概要

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Yttria-stabilized zirconia(YSZ)was deposited on hydrogen-terminated Si(001)by pulsed laser deposition(PLD)under various oxygen pressures(about 2-2×10^<-4>Pa)and laser energy densites(0.87-1.09 J/cm^2)at 800℃. The effects of O_2 pressure and laser energy density were found to be important to the formation of an epitaxial oxide thin film. With decreasing laser energy density, the O_2 pressure required to grow epitaxial YSZ films was shifted toward the lower region. Therefore, epitaxial growth of YSZ films could be achieved at a very low pressure of 2×10^<-4>Pa compared with the known O_2 pressure region used for epitaxial growth. The roughness of surfaces was very low, within 0.18-0.26 nm.
社団法人日本セラミックス協会の論文
2000-08-01