低酸素圧下で合成したエピタキシャルLa<0.5>Sr<0.5>CoO_3(LSCO)薄膜の電気特性(<特集>セラミックスインテグレーション)

概要

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A new range of oxygen pressure for the preparation of La__<0.5>Sr__<0.5>CoO_3 (LSCO) thin films was proposed. In this work, heteroepitaxial LSCO thin films were prepared on CeO_2/YSZ/Si (001) substrates in 7.3 × 10^<-2> Pa O_2 atmosphere, while LSCO thin films have been prepared in a higher oxygen pressure around 1.3-4.0 × 10^1 Pa in the literature. The film has smooth morphology and high crystallinity as well as low resistivity (2 × 10^<-3> Ωcm). The reason may be related to the long mean free path (MFP) in the depositied LSCO thin film. The film showed semiconductive property due to oxygen vacancies. By the post annealing in O_2, the lattice parameter of LSCO thin film was increased and the resistivity was lowered.
社団法人日本セラミックス協会の論文
2002-05-01