シード層の導入によるPZT,PT薄膜の結晶性/配向性の制御(<特集>セラミックスインテグレーション)

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The introduction of various seed layers produced thin films with different properties on the same substrate. PbTiO_3 (PT) and Pb (Zr_<0.52>Ti_<0.48>) O_3 (PZT) thin films with different crystallinities, crystal orientations and phases were successively fabricated on Nb doped SrTiO_3 (Nb-ST) and Pt/Ti/SiO_2/Si (Pt/Si) substrates, respectively, by introducing the SiO_2 and TiO_2 seed layers using a chemical solution deposition process. The optimum processing conditions for each combination of film, substrate and seed layers were examined from the viewpoint of the compatibility of the target film formation and the patterning process for realizing different cells on the same substrate. The c-axis oriented epitaxial PT film was formed on the Nb-ST substrate. By introducing TiO_2 and SiO_2 thin layers onto the Nb-ST substrate, the polycrystalline PT and amorphous film with PT composition were obtained, respectively. The (111) oriented PZT film, and the pyrochiore phase and PZT (110) were formed on Pt/Si without and with the SiO_2 seed layer, respectively. Combining the introduction of the seed layers and the photolithography technique, we succeeded in fabricating the thin films with different cells having various electrical properties on the same substrates. In the Pt/PZT/ (with and without seed layer) /Pt/Si system, 200μm ^φcells with ferroelectricity or dielectric properties were obtained on the same substrate.
社団法人日本セラミックス協会の論文
2002-05-01

シード層の導入によるPZT,PT薄膜の結晶性/配向性の制御(<特集>セラミックスインテグレーション)

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