Bi_2O_3を拡散したBaTiO_3BLコンデンサの粒界構造

概要

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The grain boundary structure of semiconductive BaTiO_3 and Bi_2O_3-diffused BaTiO_3 BL capacitor was studied using XRD, EDS, SEM, and AEM. Without SiO_2, Ba_6Ti_<17>O_<40> (B6T17) phase was detected in the semiconductive BaTiO_3 sample, and Ba_4Ti_<13>O_<30> (B4T13) and BaBi_4Ti_4O_<15> (BBIT) phases were found in the BL capacitor sample. On addition of SiO_2, B6T17 and Ba_2TiSi_2O_8 were found at the grain boundaries of the semiconductor, and B6T17, BTS, BBIT in the BL capacitor were found at the grain boundary. The dihedral angle seen in the semiconductive sample was about 20°, but after the Bi_2O_3 was diffused, it changed to 0°. So it is suggested that the liquid phase containing bismuth has a very low viscosity compared with that of the liquid phase without bismuth, and it is easy to make microstructure of BL capacitor when bismuth oxide diffuses.
社団法人日本セラミックス協会の論文
1992-10-01