化学溶液法による(Bi、La)_4Ti_3O_<12>/Pb(Zr,Ti)O_3複合薄膜の電気的特性の比較(<特集>セラミックスインテグレーション)

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Several (Bi, La) _4Ti_3O_<12>/Pb (Zr, Ti) O_3 composite thin films, including a sandwich structure (Bi, La) _4Ti_3O_<12>/Pb (Zr, Ti) O_3/ (Bi, La) _4Ti_3O_<12>, a multilayer structure (Bi, La) _4Ti_3O_<12>/Pb (Zr, Ti) O_3/LaNiO_3, and two bilayer structures of (Bi, La) _4Ti_3O_<12>/Pb (Zr, Ti) O_3 and Pb (Zr, Ti) O_3/ (Bi, La) _4Ti_3O_<12>, were fabricated on Pt/Ti/SiO_2/Si substrates. Both (Bi, La) _4Ti_3O_<12> and Pb (Zr, Ti) O_3 layers were prepared by a chemical solution deposition technique. The electrical properties of the composite films are affected not only by the stacking configuration of the composite films but also by the electrical properties of individual layer in the composite films. The experiments demonstrated that the (Bi, La) _4Ti_3O_<12>/Pb (Zr, Ti) O_3/ (Bi, La) _4Ti_3O_<12> sandwich structure and the (Bi, La) _4Ti_3O_<12>/Pb (Zr, Ti) O_3/LaNiO_3 multilayer structure showed fatigue-free characteristics at least up to 10^<10> switching bipolar pulse cycles and excellent retention properties. The room-temperature dielectric constants of all composite thin films ranged between 200 and 300, at a frequency of 100 kHz.
社団法人日本セラミックス協会の論文
2002-05-01