Preparation of MgIn2O4 Epitaxial Oxide Electrode with Spinel Structure and Heteroepitaxial Growth of BaTiO3–NiFe2O4 Multiferroic Composite Thin Film

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An epitaxially grown magnesium indium oxide (MgIn2O4) thin film was prepared by pulsed laser deposition (PLD) on an yttria-stabilized zirconia (YSZ)-buffered Si substrate at 300 °C. Although there is a large lattice mismatch (72.5%) between MgIn2O4[100] and YSZ[100], epitaxial growth with cube-on-cube relations, MgIn2O4(001) $\parallel$ YSZ(001) $\parallel$ Si(001) and MgIn2O4[100] $\parallel$ YSZ[100] $\parallel$ Si[100], was achieved. A room-temperature electrical conductivity of 290 S/cm and a transmittance ${>}80$% were achieved above 530 nm. The optical band gap measured for a MgIn2O4 thin film deposited on a glass substrate showed 4.2 eV. On a MgIn2O4/YSZ/Si(001) substrate, a BaTiO3–NiFe2O4 composite film was deposited at 700 and 750 °C by PLD. Although the partial decomposition of MgIn2O4 into In2O3 was observed, both BaTiO3 and NiFe2O4 were simultaneously epitaxially grown on MgIn2O4 with cube-on-cube relation. These findings indicate that MgIn2O4 can be used as a bottom electrode for multiferroic composite films such as BaTiO3 and NiFe2O4.
2009-09-25