Origin of Compressive Residual Stress in Alkoxide Derived PbTiO3 Thin Film on Si Wafer
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概要
- 論文の詳細を見る
In this paper, we describe the estimation of residual stress in the alkoxide-derived lead titanate (PTO) thin film on Si substrate by X-ray diffraction (XRD) and Raman analyses. The residual stress that was estimated by XRD and Raman analyses was compressive, and the values obtained by both methods were nearly the same. The residual stress in the PTO thin film increased with decreasing film thickness. We also attempted to calculate the theoretical stress in PTO thin films with random orientation. From the theoretical calculations, the thermal stress that comes from the difference in the thermal expansion coefficient between the Si substrate and the PTO film is calculated to be tensile. On the other hand, the phase transition stress is calculated to be compressive. In addition, this compressive phase transition stress canceled out the tensile thermal stress.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-09-25
著者
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Ohno Tomoya
Department Of Dermatology Shimane Medical University
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Malic Babara
Electronic Ceramics Department, Jožef Stefan Institute
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Wakiya Naoki
Graduate School Of Sci. And Technol. Shizuoka Univ.
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Suzuki Hisao
Graduate School Of Sci. And Technol. Shizuoka Univ.
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Matsuda Takeshi
Department Of Cardiology School Of Medicine Kanazawa Medical University
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Wakiya Naoki
Graduate School of Science and Technology, Shizuoka University, Hamamatsu 432-8561, Japan
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Fukuzawa Hiroaki
Graduate School of Science and Technology, Shizuoka University, Hamamatsu 432-8561, Japan
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Kosec Marija
Electronic Ceramics Department, Jozef Stefan Institute, 39 Jamova, Ljubljana SI-1000, Slovenia
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Kosec Marija
Electro Ceramics Department, Jožef Stefan Institute, Jamova, 39, SI-1000 Ljubljana, Slovenia
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Ohno Tomoya
Department of Materials Science and Engineering, Kitami Institute of Technology, Kitami, Hokkaido 090-8507, Japan
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Matsuda Takeshi
Department of Materials Science and Engineering, Kitami Institute of Technology, Kitami, Hokkaido 090-8507, Japan
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