Effect of Stress Engineering on the Electrical Properties of BaTiO<sub>3</sub> Thin Film
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概要
- 論文の詳細を見る
Nano porous LaNiO<sub>3</sub> (LNO) thin-film oxide electrodes were deposited on Si substrates by a chemical solution deposition (CSD) to control the residual stress in sputtered BaTiO<sub>3</sub> (BTO) thin film. The BTO thin film was deposited on the LNO/Si substrate by RF magnetron sputtering to elucidate the effect of the LNO thin-film electrode on the ferroelectric and dielectric properties of the resulting BTO thin film. The orientation of the LNO thin film was successfully controlled in the (100) direction even on the Si substrates, and therefore, the resulting BTO thin films also exhibited preferred orientation in the (001) direction. The BTO thin films deposited at a relatively low temperature of 500 °C exhibited a good hysteresis loop, indicating the usefulness of our CSD-derived LNO thin-film electrode. We also investigated the effect of the thickness of the LNO thin-film electrode on the ferroelectric property of the resulting BTO thin films.
- 2011-09-25
著者
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Ohno Tomoya
Department Of Dermatology Shimane Medical University
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SAKAMOTO Naonori
Department of Materials Science and Chemical Engineering, Shizuoka University
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FU Desheng
Graduate School of Materials Science and Technology, Shizuoka University
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Suzuki Hisao
Graduate School Of Sci. And Technol. Shizuoka Univ.
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Wakiya Naoki
Department Of Materials Science And Chemical Engineering Shizuoka University
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Matsuda Takeshi
Department Of Cardiology School Of Medicine Kanazawa Medical University
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Sakamoto Naonori
Department of Materials Science and Chemical Engineering, Shizuoka University, Hamamatsu 432-8561, Japan
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Ohno Tomoya
Department of Material Science, Kitami Institute of Technology, Kitami, Hokkaido 090-8507, Japan
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Fu Desheng
Graduate School of Science and Technology, Shizuoka University, Hamamatsu 432-8561, Japan
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Fukamachi Kohei
Department of Materials Science and Chemical Engineering, Shizuoka University, Hamamatsu 432-8561, Japan
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