Two-Dimensional Weak Localization Effect in Amorphous Cu-Mg Alloys
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概要
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Both electronic structure and electron transport properties in the amorphousCu-Mg alloys have been studied, using flash-evaporated thin films and melt-spunribbons. The Hall effect measurements revealed the validity of the free electron modelin this system. The temperature dependence of the electrical resistivity of the amorphous bulk sample can be well explained in the context of the generalized FaberZiman theory. However, a substantial deviation from this prediction occurs at lowtemperatures in thin film samples, when the film thickness is reduced below 500 A.The deviation is attributed to the two-dimensional weak localization effect. Thecritical temperature T., at which the upturn deviation becomes noticeable, is foundto increase sharply with increasing the sheet resistance. Its value reached about 50 Kfor the 50 A amorphous Cu...Mg.., alloy.
- 社団法人日本物理学会の論文
- 1986-09-15
著者
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MIZUTANI Uichiro
Department of Crystalline Materials Science, Nagoya University
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MIZUTANI Uichiro
Toyota Physical and Chemical Research Institute
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Matsuda Takeshi
Department Of Cardiology School Of Medicine Kanazawa Medical University
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HASHIZUME Junichiro
Department of Crystalline Materials Science,Nagoya University
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Mizutani U
Toyota Physical And Chemical Research Institute
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Mizutani Uichiro
Department Of Crystalline Materials Science Nagoya University
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Hashizume Junichiro
Department Of Crystalline Materials Science Nagoya University
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