Electrical Properties of SnO_2 Polycrystalline Thin Films and Single Crystals Exposed to O_2- and H_2-Gases
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概要
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The electrical conductivity σ and carrier density n have been measured in the range 77-670 K for the SnO_2 single crystal and thin films prepared by the vapour deposition technique. It is found that the SnO_2 thin film possesses a carrier density of 10^<19> cm^<-3> three orders of magnitude larger than that in the as-grown SnO_2 single crystal, and exhibits electrical properties characteristic of a degenerate semiconductor. Both single crystals and thin films undergo irreversible changes in electrical properties upon heat treatment in vacuum or exposure to O_2- or H_2-gases. This occurs as a result of reduction and oxidation of SnO_2. However, the oxidation and reduction proceed in thin films at much lower temperatures than in single crystals. The unique gas-sensing character of thin films was interpreted by assuming that the oxidation and reduction preferentially proceed along the grain boundaries in the thin film.
- 社団法人応用物理学会の論文
- 1983-03-20
著者
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MIZUTANI Uichiro
Department of Crystalline Materials Science, Nagoya University
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Yamazaki Toshinari
Department Of Crystalline Materials Science Nagoya University
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Iwama Yoshiro
Department Of Crystalline Materials Science Nagoya University
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Iwama Yoshiro
Department Of Applied Physics Faculty Of Engineering Nagoya University
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Mizutani Uichiro
Department Of Crystalline Materials Science Nagoya University
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