Pattern Formation of Sputtered Films by Deposition through Mask

概要

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The thickness of the film near the edge of a film pattern formed by sputter deposition through a mask is not uniform, because of the shadowing effect of the side wall of the mask edge. When the effect is large, a sharp pattern can not be obtained. In order to clarify the precision or the sharpness of the film pattern, the distribution of the film thickness near the pattern edge was measured. It was found that the sharpness depended on the position of the pattern edge and the attitude of the side wall of the mask. A mask with bridges was contrived for the formation of an isolated space in a film, and the film deposition under the bridge was observed. It was found that the ratio of the gap between the substrate and the bridge to the bridge width must be larger than 1.0 for the thickness under the bridge to be greater than half the full thickness.
Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
1996-09-15