Formation of Vapour-Deposited SnO_2 Thin Films Studied by Rutherford Backscattering
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概要
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SnO_2 films were prepared by evaporating SnO or SnO_2 powder onto substrates kept at various temperatures. The composition x for "as-deposited" films was determined by RBS and was found to have a wide range of values between 1.0 and 1.6, depending on the evaporation conditions. SnO_2 film was formed by annealing "as-deposited" SnO_2 film in an O_2 atmosphere. With increasing annealing time, x increased, finally reaching the stoichiometric value of 2.0, and the complete formation of SnO_2 was confirmed by X-ray diffraction and electron microscopy. It was also found that oxygen atoms penetrate into the film with a concentration gradient in the depth direction of the film. The electrical conductivity and Hall coefficient were measured for specimens annealed at 550℃ for various time intervals.
- 社団法人応用物理学会の論文
- 1982-03-05
著者
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MIZUTANI Uichiro
Department of Crystalline Materials Science, Nagoya University
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Yamazaki Toshinari
Department Of Crystalline Materials Science Nagoya University
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Iwama Yoshiro
Department Of Crystalline Materials Science Nagoya University
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Iwama Yoshiro
Department Of Applied Physics Faculty Of Engineering Nagoya University
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Mizutani Uichiro
Department Of Crystalline Materials Science Nagoya University
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