Room-Temperature Electrical-Field Induced Oxygen Diffusion of Aluminum/Yttria-Stabilized Zirconia Thin Film Grown on Si Substrate

概要

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A mechanism is proposed for room-temperature "electrical-field-induced oxygen diffusion" based on the interface reaction of aluminum/yttria-stabilized zirconia (YSZ) and the measurements of film leakage properties. The application of a positive electric field (1 MV$\cdot$cm-1) to a 25-nm-thick and 200-μm-diameter Al top electrode on a YSZ/Si thin film changes the color of the Al top electrode from silver to black in 400 s because of Al oxidation, as confirmed by secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS). Electrically induced diffusion of oxygen ions from the YSZ into the Al electrode causes the oxidation. This phenomenon was not observed when a negative field was applied; nor was it shown by an Al/SiO2/Si thin film when a positive field (50 MV$\cdot$cm-1) was applied. This method, which might be useful for device applications, can detect the redox reaction between the Al top electrode and the material, thereby indicating oxygen diffusion at low temperatures.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2006-11-15