MOCVD法によるPbTiO_3薄膜の成長様式と成膜速度が配向性に及ぼす影響

概要

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Lead titanate thin films were prepared on cleaved MgO (100) substrate by cold wall horizontal metallorganic chemical vapor deposition (MOCVD). Crystal structure of films was examined by X-ray 2θ/ω scan and X-ray pole-figure measurements. The growth mechanism of PbTiO_3 thin film at the initial growth stage was characterized using an atomic force microscope (AFM). AFM results show that the growth mechanism of PbTiO_3 thin film on MgO (100) substrate is in accordance with layer-by-layer plus islands of Stranski-Krastanov mode. Islands formed after two lattice layer with 0.8 nm PbTiO_3 film deposition on a MgO (100) substrate. The crystal orientation and surface roughness are dependent on deposition rate. (001) and (100) oriented grain were found at higher deposition rate (>2.5 nm/min). On the other hand, (212) and (221) oriented triangular-shaped grain growth was observed at relatively lower deposition rate (>2.5 nm/min), which lead to an increase of surface roughness.
社団法人日本セラミックス協会の論文
1999-10-01