0.65Pb(Mg
スポンサーリンク
概要
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The properties of 0.65Pb(Mg<inf>1/3</inf>Nb<inf>2/3</inf>)O<inf>3</inf>--0.35PbTiO<inf>3</inf>(0.65PMN--0.35PT) thick films were studied for high-frequency piezoelectric transducer applications. The films were prepared by screen-printing a thick-film paste on platinized alumina substrates and subsequent sintering at 950 °C. The effective thickness-coupling factor of these films was close to 48%, which is comparable with bulk ceramics having the same compositions. Furthermore, simulations of two configurations representing one element of a high-frequency linear-array transducer (30 MHz) suggests that 0.65PMN--0.35PT thick-films in 50 \Omega electrical matching environment improves the performance in comparison with standard Pb(Zr,Ti)O<inf>3</inf>(PZT) compositions.
- 2013-05-25
著者
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Kosec Marija
Electro Ceramics Department, Jožef Stefan Institute, Jamova, 39, SI-1000 Ljubljana, Slovenia
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Kosec Marija
Electronic Ceramics Department, Jožef Stefan Institute, Jamova cesta 39, SI-1000 Ljubljana, Slovenia
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Uršič Hana
Electronic Ceramics Department, Jožef Stefan Institute, Jamova cesta 39, SI-1000 Ljubljana, Slovenia
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Levassort Franck
François-Rabelais University, GREMAN UMR7347 CNRS, 37032 Tours, France
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Holc Janez
Electronic Ceramics Department, Jožef Stefan Institute, Jamova cesta 39, SI-1000 Ljubljana, Slovenia
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Lethiecq Marc
François-Rabelais University, GREMAN UMR7347 CNRS, 37032 Tours, France
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Holc Janez
Electronic Ceramics Department, Jožef Stefan Institute, Jamova cesta 39, SI-1000 Ljubljana, Slovenia
関連論文
- Effect of Film Thickness on Electrical Properties of Chemical Solution Deposition-Derived Pb(ZrxTi1-x)O3/LaNiO3/Si
- Origin of Compressive Residual Stress in Alkoxide Derived PbTiO3 Thin Film on Si Wafer
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