Fabrication and Optical Characterization of Five-Layer Asymmetric Coupled Quantum Well (FACQW)
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概要
- 論文の詳細を見る
The five-layer asymmetric coupled quantum well (FACQW) is a new potential-tailored quantum well (QW) that is promising for ultrafast and ultralow-voltage optical modulators and switches. We succeeded in fabricating GaAs/AlGaAs FACQW with monolayer accuracy by the molecular beam epitaxy (MBE) method by monitoring reflection high-energy electron diffraction (RHEED) specular beam intensity oscillation. Photoabsorption current measurements of the FACQW sample showed good agreement with theoretical results, and a potential for much lower voltage operation. In addition, we studied the growth sequences of GaAs/AlGaAs QWs in the migration-enhanced epitaxy (MEE) method in order to fabricate the FACQW with steeper and flatter heterointerfaces. The sequence of supplying materials for Al0.3Ga0.7As growth, on which there is no report, was modified and optimized, and the QWs of higher quality were obtained at a growth temperature of 490°C using the optimized sequence. The results of photoluminescence measurements show that the MEE method modified as mentioned above is a promising growth technique for the fabrication of FACQWs of higher quality.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2002-04-30
著者
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NOH Joo-Hyong
Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National
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ARAKAWA Taro
Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National
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HANEJI Nobuo
Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National
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Sakai Nobuaki
Department Of Electrical And Computer Engineering Graduate School Of Engineering Yokohama National U
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Miyagi Yoshitomo
Department Of Electrical And Computer Engineering Graduate School Of Engineering Yokohama National U
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Okamiya Yuuki
Department Of Electrical And Computer Engineering Graduate School Of Engineering Yokohama National U
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Suzuki Tatsuya
Department Of Chemistry And Biotechnology School Of Engineering The University Of Tokyo
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Tada Kunio
Department Of Electronic Engineering Faculty Of Engineering The University Of Tokyo
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Haneji Nobuo
Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
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Noh Joo-Hyong
Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
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Sakai Nobuaki
Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
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Okamiya Yuuki
Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
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Tada Kunio
Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
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