Step Coverage Quality of Cu Films by Supercritical Fluid Deposition Compared with Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• Feasibility of step coverage (SC) by supercritical fluid deposition (SCFD) of Cu was evaluated using a finite element method (FEM) simulation with experimentally estimated kinetics and transport properties of the precursor. This SC by Cu-SCFD was compared with that by chemical vapor deposition (CVD). SCFD showed superior SC, especially for ultra narrow features less than 1 μm wide, although CVD has a higher diffusion coefficient. This superior SC was due to the non-linear reaction kinetics of SCFD (CVD has linear reaction kinetics), where precursor concentration had negligible effect on growth rate when the precursor concentration was higher than about 1 mol/L.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-05-25

著者

• Kondoh Eiichi

  Department Of Mechanical System Engineering Faculty Of Engineering Yamanashi University

• Sugiyama Masakazu

  Institute Of Engineering Innovation School Of Engineering The University Of Tokyo

• Momose Takeshi

  Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 163-8656, Japan

• Yukihiro Shimogaki

  Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

• Masakazu Sugiyama

  Institute of Engineering Innovation, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

• Eiichi Kondoh

  Department of Mechanical System Engineering, University of Yamanashi, 4-3-11 Takeda, Kofu 400-8511, Japan

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