Surface Recombination of Crystalline Silicon Substrates Passivated by Atomic-Layer-Deposited AIOx (Special Issue : Solid State Devices and Materials (2))
スポンサーリンク
概要
著者
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Ohshita Yoshio
Toyota Technological Inst. Nagoya Jpn
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Lee Hyun
School of Chemical Engineering and Materials Science, Chung-Ang University, 221 Huksuk-dong, Dongjak-gu, Seoul 156-756, Korea
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Tachibana Tomihisa
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Miki Shohei
School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280, Japan
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Arafune Koji
School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280, Japan
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Yoshida Haruhiko
School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280, Japan
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Satoh Shin-ichi
School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280, Japan
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Matsutani Ryosuke
School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280, Japan
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Hamano Junpei
School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280, Japan
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Ogura Atsuhi
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
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