Synthesis of Novel Sr Sources for Metalorganic Chemical Vapor Deposition of SrTiO_3 (<Special Issue> FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)

概要

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Novel Sr source materials for metalorganic chemical vapor deposition (MOCVD) of SrTiO_3 have been developed. They were synthesized by adding amine, triethylenetetramine (trien) or tetraethylenepentamine (tetraen), to bis-dipivaloylmethanato strontium (Sr(DPM)_2, or strontium-bis-2,2,6,6-tetramethyl-3,5-heptanedionate). The new sources, Sr(DPM)_2-trien_2 and Sr(DPM)_2-tetraen_2, have a low melting point (43-75℃), and are liquid in phase when they are vaporized at 120-130℃. SrTiO_3 thin films were prepared on Pt/Ta/SiO_2/Si substrates by MOCVD using the new Sr sources. The dielectric constant of films prepared with Sr(DPM)_2-trien_2 was 215 for 125 nm thick SrTiO_3 films, and leakage current densities were below 10^<-6> A/cm^2 at 1.5 V for 80 nm thick SrTiO_3 films. The new Sr sources did not change in quality after 20-time heat cycles between room temperature and 130℃ in Ar atmosphere at 40 Torr.
社団法人応用物理学会の論文
1994-09-30