Vapor Pressure of Hf and Si Precursors for Hf_xSi_<1-x>O_2 Deposition Evaluated by a Saturated Gas Technique
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概要
- 論文の詳細を見る
- 2004-03-15
著者
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Ogura Atsushi
Silicon Systems Research Laboratories Nec Corporation
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MACHIDA Hideaki
Tri Chemical Laboratory Inc.
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Kada Takeshi
Tri Chemical Laboratory Inc.
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Ogura A
Meiji University
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OHSHITA Yoshio
Toyota Technological Institute
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Ishikawa Masato
Tri Chemical Laboratories Inc., 8154-217 Uenohara, Uenohara, Yamanashi 409-0112, Japan
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