Delay Time of THz Wave Emission after Ultrafast Excitation in n-GaAs
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概要
- 論文の詳細を見る
To determine the delay time of the THz wave emission after an excitation in n-GaAs, we measured the autocorrelation between the reflection beam and probe beam as two-photon-induced photo-response by a GaAsP photodiode and the crosscorrelation between the THz wave and the same probe beam. The delay time is determined to be less than 50 fs in n-GaAs.
- Japan Society of Applied Physicsの論文
- 2004-02-15
著者
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Nagasaka Keigo
Department Of Material Physics Faculty Of Engineering Science Osaka University
-
Otake Satoshi
Department Of Physics Faculty Of Science Tokyo University Of Science
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Otake Satoshi
Department of Physics, Faculty of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan
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