Shallow Donor Complex in Annealed Si
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概要
- 論文の詳細を見る
Photoconductivity spectra of floating-zone St(P) samples with densities ofdislocations 10' or 10'-10' cm " have been measured in the range from 250 to400 cm- " in order to explore shallow dislocation levels. New lines are observed inthe annealed Si(P) samples with cutting damage surface. However, these areinsensitive to dislocation density, and strongly influenced by the surface conditionin the armealing operation. Thus these new lines are to be ascribed to complexcenters : a P atom paired with another kind of impurity or point defect which isintroduced from cutting damage surface and diffused into the bulk.
- 社団法人日本物理学会の論文
- 1984-02-15
著者
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NAGASAKA Keigo
Department of Physics,Faculty of Science,Science University of Tokyo
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Nagasaka K
Sci. Univ. Tokyo Tokyo
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Nagasaka K
Department Of Physics Science University Of Tokyo
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Nagasaka Keigo
Department Of Physics Science University Of Tokyo
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Nagasaka Keigo
Department Of Material Physics Faculty Of Engineering Science Osaka University
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OKAZAKI Youji
Department of Physics,Science University of Tokyo
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Okazaki Youji
Department Of Physics Science University Of Tokyo
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Okazaki Yukiko
Department Of Physics Science Univetsity Of Tokyo:(present Address) Technical Research Division Kawa
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