Charge State Density Profiling of EL2 Deep Donor in GaAs Using Selective Excitation Luminescence

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1989-05-20

著者

• Tajima Michio

  Electrotechnical Laboratory

• Iino Takayuki

  Electronics Materials Laboratory Sumitomo Metal Mining Co. Ltd.

• Tajima Michio

  Electrotechnical Laboratory:(present Address) The Institute Of Space And Astronautical Science

関連論文

• The Staebler-Wronski Effect on Defect Luminescence in Hydrogenated Amorphous Silicon
• Charge State Density Profiling of EL2 Deep Donor in GaAs Using Selective Excitation Luminescence
• Photoluminescence Analysis of 'New Donors' in Silicon
• Photoluminescence Analysis of Annealed Silicon Crystals
• Photoluminescence Spectra of Thermal Donors in Silicon
• Direct Observation of Dislocations in a LEC-GaP Crystal by Light Scattering Method
• Photoluminescence Associated with Nitrogen in Silicon
• Recovery Effect of Deep Level Luminescence Induced by Below Band-Gap Excitation in GaAs
• Characterization of Residual Impurities in Highly Pure Si Crystals by Photoluminescence Technique : C-3: CRYSTAL TECHNOLOGY
• Fatigue and Recovery Effects of the 0.65-eV Emission Band in GaAs
• A New Type of Etch-Pit in an LEC-GaP Crystal
• Characterization of Nonuniformity in Semi-Insulating LEC GaAs by Photoluminescence Spectroscopy
• Mapping of EL2-Related Luminescence on Semi-Insulating GaAs Wafers at Room Temperature : Semiconductors and Semiconductors Devices
• Photoluminescence Analyses of Shallow Impurities in Silicon
• Photoluminescence Analysis of Impurities in Epitaxial Silicon Crystals

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